کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8038266 | 1518332 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
3D strain measurement in electronic devices using through-focal annular dark-field imaging
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: 3D strain measurement in electronic devices using through-focal annular dark-field imaging 3D strain measurement in electronic devices using through-focal annular dark-field imaging](/preview/png/8038266.png)
چکیده انگلیسی
Spherical aberration correction in high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM) allows us to form an electron probe with reduced depth of field. Using through-focal HAADF imaging, we experimentally demonstrated 3D strain measurement in a strained-channel transistor. The strain field distribution in the channel region was obtained by scanning an electron beam over a plan-view specimen. Furthermore, the decrease in the strain fields toward the silicon substrate was revealed at different focal planes with a 5-nm focal step. These results demonstrate that it is possible to reconstruct the 3D strain field in electronic devices.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 146, November 2014, Pages 1-5
Journal: Ultramicroscopy - Volume 146, November 2014, Pages 1-5
نویسندگان
Suhyun Kim, Younheum Jung, Sungho Lee, Joong Jung Kim, Gwangseon Byun, Sunyoung Lee, Haebum Lee,