کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8038443 1518343 2013 6 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Assessing the precision of strain measurements using electron backscatter diffraction - Part 2: Experimental demonstration
ترجمه فارسی عنوان
ارزیابی دقیق اندازه گیری های فشار با استفاده از پراش پرتو الکترونی - قسمت 2: تظاهرات تجربی
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
چکیده انگلیسی
The residual impression after performing a microhardness indent in silicon has been mapped with high resolution EBSD to reveal residual elastic strain and lattice rotation fields. Mapping of the same area has been performed with variable pattern binning and exposure times to reveal the qualitative and quantitative differences resulting from reducing the pattern size and exposure time. Two dimension 'image' plots of these fields indicate that qualitative assessment of the shape and size of the fields can be performed with as much as 4×4 binning. However, quantitative assessment using line scans reveals that the smoothest profile can be obtained using minimal pattern binning and long exposure times. To compare and contrast with these experimental maps, finite element analysis has been performed using a continuum damage-plasticity material law which has been independently calibrated to Si [9]. The constitutive law incorporates isotropic hardening in compression, and isotropic hardening and damage in tension. To accurately capture the localised damage which develops during indentation via the nucleation and propagation of cracks around the indentation site cohesive elements were assigned along the interfaces between the planes which experience the maximum traction. The residual strain state around the indenter and the size of the cracks agree very well with the experimentally measured value.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 135, December 2013, Pages 136-141
نویسندگان
, , , , , ,