کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8038469 1518344 2013 11 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
The influence of inelastic scattering on EFTEM images-exemplified at 20 kV for graphene and silicon
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
The influence of inelastic scattering on EFTEM images-exemplified at 20 kV for graphene and silicon
چکیده انگلیسی
We present model-based image simulations for zero-loss and plasmon-loss filtered images at 20 kV for graphene and silicon based on the mutual coherence approach. In addition, a new approximation for the mixed dynamic form factor is introduced. In our calculation multiple elastic scattering and one inelastic scattering are taken into account. The simulation shows that even the intensity of zero-loss filtered image is attenuated by the interference between inelastically scattered waves. Moreover, the intensity of plasmon-loss filtered images cannot be neglected, either.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Ultramicroscopy - Volume 134, November 2013, Pages 102-112
نویسندگان
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