کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8039029 | 1518590 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Plasma based nitrogen ion implantation to hydrogenated diamond-like carbon films
ترجمه فارسی عنوان
پیوند یون نیتروژن بر پایه پلاسما به فیلم های کربن مانند هیدروژنه مانند الماس
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کلمات کلیدی
پلاسمای نیتروژن، پیوند یون بر پایه پلاسما، الماس مانند کربن فیلم، نیترید کربن، رسانایی الکتریکی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
Surface modification of hydrogenated diamond-like carbon films prepared by C7H8 plasma is carried out by the implantation of nitrogen ions in pure nitrogen plasmas, changing the modification time from 0 to 30â¯min. A negative high voltage pulse with a value of 10â¯kV, a width of 10â¯Âµs, and a repetition rate of 2â¯kHz is applied to the substrate. The electrical resistivity decreases from 2.1â¯Î©cm to 0.08â¯Î©cm with increasing the modification time. The film hardness also decreases from about 11â¯GPa to about 7.5â¯GPa. The near surface region in the films modified by the nitrogen implantation is expected to contain the relative nitrogen content of about 10%, based on the results of X-ray photoelectron spectroscopy (XPS). The XPS measurements in the depth direction show that the nitrogen content depends on the modification time and the depth of nitrogen implantation is approximately 20â¯nm or more at the modification time longer than 18â¯min. The relative content of carbon increases from 80% on the surface to 99% except for the content of hydrogen and sp2 C bond is always dominant in the XPS. The estimated resistivity of the nitrogen ion implanted layer decreases to 0.008-0.013â¯Î©cm with increasing the modification time.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 433, 15 October 2018, Pages 87-92
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 433, 15 October 2018, Pages 87-92
نویسندگان
Takashi Kimura, Hidekazu Yanai, Setsuo Nakao, Kingo Azuma,