کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8039057 | 1518592 | 2018 | 9 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural evolution of thermal annealed Si(0â¯0â¯1) surface layers fabricated by plasma immersion He+ implantation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Structural evolution in Si(0â¯0â¯1) surface layers after high-dose (Dâ¯=â¯5â¯Ãâ¯1017â¯cm-2) low-energy (2 and 5â¯keV) plasma immersion He+ ion implantation (He+ PIII) and subsequent annealing at 853 and 1073â¯K was studied by complementary structural sensitive methods (TEM, XRR, RBS, and AFM). Formation of a three-layer structure (amorphous a-SiOx sublayer at the surface, amorphous a-Si sublayer with large size helium-filled bubbles, and heavily damaged crystalline c-Si sublayer containing small-size bubbles and Si nanocrystallites) was observed for both implantation energies. This three-layer structure is retained after annealing. It was shown that the thickness of the oxide sublayer does not depend on implantation energy and does not change after annealing. This amorphous oxide sublayer together with dense top part of the a-Si sublayer forms a cap layer with a thickness of 15â¯nm that can be considered as a protective layer for the sublayers containing He-filled bubbles and Si nanocrystallites. The Si nanocrystallites were revealed at the boundary of the a-Si and the c-Si sublayers both in as-implanted at 5â¯keV and annealed samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 431, 15 September 2018, Pages 38-46
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 431, 15 September 2018, Pages 38-46
نویسندگان
Andrey A. Lomov, Kirill D. Shcherbachev, Andrey V. Miakonkikh, Yury M. Chesnokov, Dmitry A. Kiselev,