کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8039306 | 1518605 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Transfer-free synthesis of graphene-like atomically thin carbon films on SiC by ion beam mixing technique
ترجمه فارسی عنوان
سنتز نقرهای بدون کربن اتم بر روی سی با تکنیک مخلوط کردن پرتوهای یون گرافن
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موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
Here we demonstrate the synthesis of graphene directly on SiC substrates at 900â¯Â°C using ion beam mixing technique with energetic carbon cluster ions on Ni/SiC structures. The thickness of 7-8â¯nm Ni films was evaporated on the SiC substrates, followed by C cluster ion bombarding. Carbon cluster ions C4 were bombarded at 16â¯keV with the dosage of 4â¯Ãâ¯1016â¯atoms/cm2. After thermal annealing process Ni silicides were formed, whereas C atoms either from the decomposition of the SiC substrates or the implanted contributes to the graphene synthesis by segregating and precipitating process. The limited solubility of carbon atoms in silicides, involving SiC, Ni2Si, Ni5Si2, Ni3Si, resulted in diffusion and precipitation of carbon atoms to form graphene on top of Ni and the interface of Ni/SiC. The ion beam mixing technique provides an attractive production method of a transfer-free graphene growth on SiC and be compatible with current device fabrication.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 418, 1 March 2018, Pages 27-33
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 418, 1 March 2018, Pages 27-33
نویسندگان
Rui Zhang, Fenghua Chen, Jinbin Wang, Dejun Fu,