Raman study of InxGa1−xN (x = 0.32-0.9) films irradiated with Xe ions at room temperature and 773 K

Wurtzite InxGa1−xN (x = 0.32, 0.47, 0.7, 0.8, and 0.9) films grown on the GaN epilayers were irradiated with 5 MeV Xe ions to fluences of 3 × 1013 and 6 × 1013 cm−2 at room temperature (RT) and 773 K. Raman spectroscopy was used to study the effects on structure and electron carrier concentration in the irradiated materials. The results show that the irradiation induces lattice relaxation and reduction of the electron carrier concentration in the films, the extent of which increases and decreases, respectively, with increasing In content x in InxGa1−xN. Compared to RT irradiation, significant simultaneous defect recovery was observed during irradiation at 773 K up to a fluence of 3 × 1013 cm−2. Further irradiation to 6 × 1013 cm−2 leads to delamination of the In-rich InxGa1−xN films (x = 0.7, 0.8 and 0.9) from the GaN epilayers.