کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8039508 | 1518609 | 2018 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Studies of O18 impurity trapping at interstitial dislocation loops in ion implanted Fe (1â¯1â¯0) by ion channeling and ab initio calculations
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Studies of O18 impurity trapping at interstitial dislocation loops in ion implanted Fe (1â¯1â¯0) by ion channeling and ab initio calculations Studies of O18 impurity trapping at interstitial dislocation loops in ion implanted Fe (1â¯1â¯0) by ion channeling and ab initio calculations](/preview/png/8039508.png)
چکیده انگلیسی
The O18 and self ions are implanted at same depth in Fe (1â¯1â¯0) crystal and annealed to study the oxygen trapping under excess self interstitial defects. Rutherford backscattering spectrometry, nuclear reaction analysis and channeling measurements have been performed to determine the lattice site position of O18. The presence of dislocation loops is confirmed by energy-dependent dechanneling parameter measurements. From the tilt angular scans of Fe and O18 signals along ã1â¯0â¯0ã, ã1â¯1â¯0ã axes, O18 is found to be displaced 0.2â¯Ã
from tetrahedral towards octahedral interstitial site in O18. Similar lattice site location of oxygen with the displacement of 0.37â¯Ã
is predicted by density functional theory calculations for the interaction of oxygen with ã1â¯0â¯0ã interstitial dislocation loop structure. Our results provide strong evidence on oxygen trapping at interstitial dislocation loops in the presence of excess interstitial defects in iron.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 414, 1 January 2018, Pages 141-145
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 414, 1 January 2018, Pages 141-145
نویسندگان
Vairavel Mathayan, Saravanan Kothalamuthu, Jaiganesh Gnanasekaran, Sundaravel Balakrishnan, Binaykumar Panigrahi,