Keywords: یون کانالینگ; Radiation defects; Dynamics; Ion channeling; Damage buildup; Si;
مقالات ISI یون کانالینگ (ترجمه نشده)
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Keywords: یون کانالینگ; Ion channeling; Half-angles; Minimum yields
Keywords: یون کانالینگ; Ion channeling; Rainbows; Interaction potential;
Keywords: یون کانالینگ; Compound crystals; Ion channeling; Monte Carlo simulations; Defects;
Keywords: یون کانالینگ; Ion channeling; Minor axes; Silicon; Crystallography; Ion implantation;
Keywords: یون کانالینگ; Thermonuclear reaction; Ion channeling; Interatomic potentials;
Studies of O18 impurity trapping at interstitial dislocation loops in ion implanted Fe (1â¯1â¯0) by ion channeling and ab initio calculations
Keywords: یون کانالینگ; Ion channeling; Radiation damage; Density functional theory; Lattice location; Dislocation loop;
iCHORD-SI combination as an alternative to EDS-EBSD coupling for the characterization of γ-γⲠnickel-based superalloy microstructures
Keywords: یون کانالینگ; Focused ion beam; Ion channeling; Secondary ions; EDS-EBSD coupling; Gamma - gamma prime nickel-based superalloy;
OSCAR: A new modular device for the identification and correlation of low energy particles
Keywords: یون کانالینگ; Modular detectors; Low identification thresholds; Thin silicon detectors; Silicon uniformity; Ion channeling; Isospin dynamics;
Defect structure of oxygen-vacancy clusters in O18 and self ion implanted Fe(100) crystal by ion channeling and ab-initio study
Keywords: یون کانالینگ; Ion channeling; Radiation damage; DFT; Lattice location; Dislocation loop;
Lattice location of O18 in ion implanted Fe crystals by Rutherford backscattering spectrometry, channeling and nuclear reaction analysis
Keywords: یون کانالینگ; Oxygen interstitial; Ion implantation; Ion channeling;
Effects of Fe concentration on the ion-irradiation induced defect evolution and hardening in Ni-Fe solid solution alloys
Keywords: یون کانالینگ; Ion irradiation; Solid solution alloy; Nanoindentation; Ion channeling; Molecular dynamic simulation;
50Â years of ion channeling in materials science
Keywords: یون کانالینگ; Ion channeling; Material science; Crystallography; Defects and impurities; Rutherford backscattering spectrometry;
Experimental and modeling study on increasing accuracy of strain measurement by ion beam analysis in SiGe strained layer thin films
Keywords: یون کانالینگ; Rutherford backscattering; Ion channeling; Strained layer thin films; Molecular beam epitaxy;
Monte Carlo simulations of backscattering process in dislocation-containing SrTiO3 single crystal
Keywords: یون کانالینگ; Defects; Dislocations; Ion channeling; Monte Carlo simulations; Ion implantation
Ion channeling in CuInSe2 single crystals
Keywords: یون کانالینگ; CuInSe2; Ion channeling; Defects;
Ion channeling study of epitaxy of iron based Heusler alloy films on Ge(111)
Keywords: یون کانالینگ; Ion channeling; Heusler alloy film; Ordered lattice; Atomic displacement
Monte Carlo simulations of ion channeling in crystals containing extended defects
Keywords: یون کانالینگ; Rutherford backscattering; Ion channeling; Monte Carlo simulations; GaN epitaxial layers; Ion bombardment; Extended defects
Superfocusing of channeled protons and crystal rainbows
Keywords: یون کانالینگ; 61.85.+p; Ion channeling; Rainbows;
HRBS/channeling studies of ultra-thin ITO films on Si
Keywords: یون کانالینگ; 68.49.−h; 61.85.+p; 68.55.AjHigh-resolution RBS; Ion channeling; Interfacial strain
The effect of crystalline structure on molecular effect in ion-induced electron emission
Keywords: یون کانالینگ; Ion-induced electron emission; Molecular effect; Ion channeling; Transparency model;
Effect of oblique-angle deposition on early stage of Fe–Si growth
Keywords: یون کانالینگ; Iron silicide; Oblique-angle deposition; Rutherford backscattering spectroscopy; Ion channeling
RBS-channeling analysis of ion-irradiation effects in heavily-doped Si:As
Keywords: یون کانالینگ; 61.82.Fk; 82.80.Yc; 61.72.Tt; 61.80.Jh; MeV ion implantation; Doping; Electrical activity; Defects; Ion channeling;
Subsurface structures in initial stage of FeSi2 growth studied by high-resolution Rutherford backscattering spectroscopy
Keywords: یون کانالینگ; Iron silicide; Reactive deposition epitaxy; Rutherford backscattering spectroscopy; Ion channeling
Angular dependence of defect formation in H-implanted silicon studied using deep level transient spectroscopy
Keywords: یون کانالینگ; 71.55.Cn; 72.20.Jv; 71.55.−i; 85.40.RyDeep level transient spectroscopy; Silicon; Ion implantation; Ion channeling; Implantation-induced defects
Physical insight into the phenomenon of B clustering in Si at room temperature
Keywords: یون کانالینگ; 61.80.Jh; 61.72.Dd; 66.30.JtB; Si self-interstitial; Ion channeling; B clustering
Growth of Ni-Al alloys on Ni(1 1 1), from Al deposits of various thicknesses: (II) Formation of NiAl over a Ni3Al interfacial layer
Keywords: یون کانالینگ; Nickel; Aluminum; Alloys; Growth; Epitaxy; Diffusion; Ion channeling; Rutherford backscattering spectrometry (RBS); Nuclear resonance profiling (NRP); Auger electron spectroscopy (AES); Low energy electron diffraction (LEED); X-ray diffraction (XRD); Atom
Applications of high energy ion beam techniques in environmental science: Investigation associated with glass and ceramic waste forms
Keywords: یون کانالینگ; Rutherford backscattering spectrometry; Nuclear reaction analysis; Ion channeling; Ion exchange; Glass and ceramic waste forms; Ion beam analysis; Environmental science; Radiation damage; Thermal recovery;
Instrumental developments at the IBA-AMS dating facility at the University of Lecce
Keywords: یون کانالینگ; 32.30.Rj; 34.50.Dy; Accelerator mass spectrometry; Radiocarbon dating; Ion beam analysis; Ion channeling;
Defect analysis of NiMnSb epitaxial layers
Keywords: یون کانالینگ; 61.72.Dd; 61.66.Dk; 61.10.Nz; 61.85.+p; Spintronics; Half-metals; Molecular beam epitaxy; Ion channeling; Structural defects;
Low-energy P+ ion channeling and implantation into Si(1Â 1Â 0), SiC(1Â 1Â 0), GaP(1Â 1Â 0) and GaAs(1Â 1Â 0)
Keywords: یون کانالینگ; Computer simulation; Ion channeling; Energy losses; Energy distributions; Depth profile distributions;
Accumulation and recovery of disorder in Au2+-irradiated Cd2Nb2O7
Keywords: یون کانالینگ; 61.80.Jh; 61.72.Cc; 61.85.+p; Ion irradiation; Lattice disorder; Ion channeling; Pyrochlores;
Atomistic simulation of ion channeling in heavily doped Si:As
Keywords: یون کانالینگ; 61.85.+p; 61.72.Tt; 82.80.Yc; 61.80.Jh; Ion channeling; Atomic location of impurities; Vacancy-As complexes; Monte Carlo simulation;
Fabrication and characterization of thin ÎE detectors for spectroscopic application
Keywords: یون کانالینگ; 29.40.Wk; 07.75.+h; 61.85.+p; Thin silicon detector; ÎE detector; Energy straggling; Ion channeling;