Monte Carlo simulations of ion channeling in crystals containing extended defects

A Monte Carlo code for simulations of ion channeling in crystals containing extended defects has been developed. A bent channel model of lattice distortions produced by dislocations has been used for defect analysis in ion implanted GaN. To test the code, the energy dependence of the dechanneling parameter has been calculated for crystals containing randomly displaced atoms and bent channels. It follows the 1/E and E1/2 dependence, respectively.