کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8041692 | 1518687 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Experimental and modeling study on increasing accuracy of strain measurement by ion beam analysis in SiGe strained layer thin films
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We have used Rutherford backscattering spectrometry to characterize Si/ε-Si0.8Ge0.2/Si strained-layer heterogeneous epitaxial structures. Two-dimensional yield mapping of backscattered 2 MeV He atoms as a function of tilting angles around off-normal ã1 1 0ã axis are obtained. For Si/Si0.8Ge0.2/Si with buried strained layer, we observe distortion of (1 1 0) planar minimum in yield mapping from Ge. The distortion features slightly decreasing angular offsets with decreasing tilting away from ã1 1 0ã axis. Our finding suggests that strain measurements using one dimensional angular scan within or close to (1 0 0) plane will lead to strain underestimation. A two dimensional yield mapping is preferred over one dimensional angular scan for high accuracy in strain measurements, so the angular off-set can be measured in a region free of distortion. The experimental observations are in good agreement with our modeling prediction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 332, 1 August 2014, Pages 385-388
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 332, 1 August 2014, Pages 385-388
نویسندگان
Michael S. Martin, Dharshana Wijesundera, Phillip E. Thompson, Xuemei Wang, Wei-Kan Chu, Lin Shao,