کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8040780 | 1518665 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Influence of radiation damage on krypton diffusion in silicon carbide
ترجمه فارسی عنوان
تأثیر آسیب تابشی بر انتشار کریپتون در کاربید سیلیکون
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کلمات کلیدی
کاربید سیلیکون، نفوذ، آسیب تابشی،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
Diffusion of krypton in poly and single crystalline silicon carbide is investigated and compared with the previously obtained results for xenon, which pointed to a different diffusion mechanism than observed for chemically active elements. For this purpose 360 keV krypton ions were implanted in commercial 6H-SiC and CVD-SiC wafers at room temperature, 350 °C and 600 °C. Width broadening of the implantation profiles and krypton retention during isochronal and isothermal annealing up to temperatures of 1400 °C was determined by RBS-analysis, whilst in the case of 6H-SiC damage profiles were simultaneously obtained by α-particle channeling. Little diffusion and no krypton loss was detected in the initially amorphized and eventually recrystallized surface layer of cold implanted 6H-SiC during annealing up to 1200 °C. Above that temperature thermal etching of the implanted surface became increasingly important. No diffusion or krypton loss is detected in the hot implanted 6H-SiC samples during annealing up to 1400 °C. Radiation damage dependent grain boundary diffusion is observed at 1300 °C in CVD-SiC. The results seem to indicate, that the chemically inert noble gas atoms do not form defect-impurity complexes, which strongly influence the diffusion behavior of other diffusors in silicon carbide.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 354, 1 July 2015, Pages 42-46
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 354, 1 July 2015, Pages 42-46
نویسندگان
E. Friedland, T.T. Hlatshwayo, N.G. van der Berg, M.C. Mabena,