کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8041518 | 1518687 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Charge collection efficiency degradation on Si diodes irradiated with high energy protons
ترجمه فارسی عنوان
تضعیف کارایی جمع آوری شارژ در دیودهای سیال تابش شده با پروتون های انرژی بالا
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
The charge collection efficiency (CCE) of several p-type Si diodes has been determined by the Ion Beam Induced Charge (IBIC) technique with 4Â MeV protons. In addition, the time evolution of the collected carriers has been recorded as a function of the reverse bias voltage. The diodes were irradiated in our cyclotron with 17Â MeV protons and fluences ranging from 3.3Â ÃÂ 1011 to 1.65Â ÃÂ 1013Â p/cm2. The high energy irradiation was selected because of the practically constant value of the proton stopping power across the samples, leading to a uniform vacancy profile with depth. It is observed that the CEE decreases linearly with radiation fluence while the leakage current increases with ion dose. From these results, the diffusion length of minority carriers, the damage constant and the damage coefficient of p-type Si diodes have been evaluated.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 332, 1 August 2014, Pages 220-223
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 332, 1 August 2014, Pages 220-223
نویسندگان
J. Garcia Lopez, M.C. Jimenez-Ramos,