کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8042005 | 1518700 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Linear energy transfer dependence of single event gate rupture in SiC MOS capacitors
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
Metal-oxide-semiconductor (MOS) capacitors were fabricated on n-type 4H silicon carbide (SiC) epitaxial layers grown on n-type 4H-SiC substrates, and the currents through the gate oxide of the MOS capacitors were measured under accumulation bias conditions during heavy-ion irradiation. Evaluation of the linear energy transfer (LET) dependence of the critical electric field (Ecr) at which dielectric breakdown occurred in these capacitors revealed that the reciprocal of Ecr (1/Ecr) increased linearly with increasing LET. The slope of LET dependence of 1/Ecr for SiC is lower than that for Si, suggesting that SiC MOS devices are less susceptible to single-event gate rupture (SEGR) than Si MOS devices. The limitation of previously proposed SEGR models based on SiO2 on Si is discussed, as is the importance of the physical parameters of the oxide and semiconductor materials (bandgap, carrier lifetime and mobility, etc.).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 319, 15 January 2014, Pages 75-78
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 319, 15 January 2014, Pages 75-78
نویسندگان
Manato Deki, Takahiro Makino, Naoya Iwamoto, Shinobu Onoda, Kazutoshi Kojima, Takuro Tomita, Takeshi Ohshima,