
Electrical properties of reactive-ion-sputtered Al2O3 on 4H-SiC
Keywords: خازن نیمه هادی فلزات; Aluminum oxide; 4H-SiC; Reactive-ion sputtering; Fowler–Nordheim tunneling; Poole-Frenkel tunneling; Oxygen annealing; Forming gas annealing; Metal-oxide-semiconductor capacitor