کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
1668481 1008869 2011 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد فناوری نانو (نانو تکنولوژی)
پیش نمایش صفحه اول مقاله
Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films
چکیده انگلیسی

The effects of UV-ozone treatment on ZnO thin films prepared by using radio-frequency magnetron sputtering are investigated. Decrease in the density of oxygen vacancy as well as increase in the density of oxygen interstitial were inferred from the UV-ozone treated samples. It was also found that a considerable difference in the work function (0.25 eV) is induced by UV-ozone treatment implying a shift in Fermi level. This shift was confirmed by capacitance–voltage measurements, which demonstrated that the boundary between the inversion region and the depletion region of a ZnO-based metal-oxide-semiconductor (MOS) capacitor positively shifts when UV ozone treated. Our results clearly indicate that the threshold voltage of a thin film transistor can be adjusted by modifying the ZnO surface via UV ozone treatment. MOS capacitors fabricated with UV-ozone treated HfO2 and/or ZnO also yielded a smaller leakage current (~ 73%–90% smaller) and a larger breakdown voltage (~ 8%–11% larger). The physical mechanism behind the effect of the UV ozone treatment is addressed in this study with the help of X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Thin Solid Films - Volume 520, Issue 1, 31 October 2011, Pages 569–573
نویسندگان
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