کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8042293 1518702 2013 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Ion beam irradiation effects on Ge nanocrystals synthesized by using RF sputtering followed by RTA
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Ion beam irradiation effects on Ge nanocrystals synthesized by using RF sputtering followed by RTA
چکیده انگلیسی
Here we report the effects of ion beam irradiation on Ge nanocrystals (NCs) embedded in SiO2 matrix. The Ge NCs embedded in silicon oxide matrix have been synthesized using RF magnetron co-sputtering technique followed by rapid thermal annealing. Eventually, Ge NCs were irradiated by 120 MeV Ag ions with various fluences at room temperature. X-ray diffraction patterns indicate the decrease in average size of Ge NCs with increase in irradiation fluence. Raman scattering spectra showed a peak of Ge-Ge optical phonon vibrational mode shifted towards lower wavenumber side upon irradiation with respect to its bulk value, which is due to quantum confinement of optical phonons in the NCs. This blue shift also reflects decrease in the size of NCs upon irradiation. Change of NC size with the increase of irradiation fluence can be explained on the basis of energy deposited by incident ion inside the target material.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms - Volume 315, 15 November 2013, Pages 161-164
نویسندگان
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