کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044133 | 1518916 | 2018 | 8 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Effects of bias voltage on the microstructure and properties of Al-doped hydrogenated amorphous carbon films synthesized by a hybrid deposition technique
ترجمه فارسی عنوان
اثر ولتاژ تعاملی بر ریزساختار و خواص های کربن هیدروژنه آمورف آلدفید سنتز شده توسط روش رسوب ترکیبی
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
Al-doped hydrogenated amorphous carbon films were deposited by a hybrid deposition technique combining middle-frequency magnetron sputtering and anode layer ion source. The evolution of chemical composition, surface morphology and chemical bonding state of the resultant films were investigated using XPS, SEM, TEM and Raman spectroscopy, respectively. It was found that the surface morphology of as-deposited films evolved from a rough surface with quasi-columnar characteristic to an ultra-smooth surface with the increasing of applied bias voltage from 0â¯V to â400â¯V. At the low bias voltage of 0â¯V to â50â¯V, a polymer-like structure was mainly formed. A diamond-like structure is dominated at the moderate bias voltage of â100â¯V to â300â¯V, while it transforms to graphite-like after a further increase of the applied bias voltage up to â400â¯V. The residual stresses and tribological behavior were characterized by stress-tester and ball-on-disk tribo-meter, respectively. The results suggested that tensile stress or compressive stress of the a-C:H(Al) film can be tailored by modifying the applied bias voltage. Particularly, the film deposited at â150â¯V exhibited a combination of superior properties, including low residual stress, high hardness, a low steady-state friction coefficient of 0.045 and wear rate of 2.7â¯Ãâ¯10â7â¯mm3â¯N-1·m-1.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 154, August 2018, Pages 159-166
Journal: Vacuum - Volume 154, August 2018, Pages 159-166
نویسندگان
Wei Xu, Songsheng Lin, Mingjiang Dai, Qian Shi, Chunbei Wei, Xiaofeng Zhang, KeSong Zhou,