کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044185 | 1518915 | 2018 | 22 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Homo-epitaxial growth of single crystal diamond in the purified environment by active O atoms
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
The pure oxygen was introduced into the growth environment of the single crystal diamond with different contents, and the growth characteristics of single crystal diamond and the reaction dynamics in the plasma were studied in detail. As the ratio of O2 to H2 is up to 1.5%, the unique shaped etching pits with eight symmetric crystallographic planes appear. Optical emission spectra present typical characteristic radicals in the O2 incorporated growth environment. With amount of O2 increases, the growth rate decreases gradually due to the low active carbon source concentration and electron temperature. In the carbon contained hydrogen plasma, O2 will react with CH radicals preferentially at low concentration and the dynamic equilibrium of CH and C2 radicals was achieved at the O2 concentration of 0.5% and 1%. Accompanying with the O2 addition, the nitrogen and silicon related impurities have been reduced during the epitaxial growth process. Meanwhile, all of the FWHM of characteristic peaks in Raman decrease obviously after the epitaxial growth without and with O2 addition, and FWHM of most samples are about 2.6â¯cmâ1, which are comparable with the natural type IIa SCD without stress.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 155, September 2018, Pages 391-397
Journal: Vacuum - Volume 155, September 2018, Pages 391-397
نویسندگان
Jinlong Liu, Liangzhen Lin, Yun Zhao, Yuting Zheng, Kang An, Junjun Wei, Liangxian Chen, Lifu Hei, Jingjing Wang, Zhihong Feng, Chengming Li,