Characterization of silicon surfaces implanted with silver ions at low energy using spectroscopic ellipsometry

An amorphous silicon (α-Si) layers formed on the surface of single-crystal substrate (c-Si) by low-dose implantation with silver ions were studied by spectroscopic ellipsometry. Ion implantation of c-Si was carried out with energy of 30 keV, current density varied from 0.1 to 5 μA/cm2 and with doses in the range of 6.24·1012-1.3·1016 ion/cm2. The effect of non-linear increase in the generation rate of radiation defects with a grow of current density was observed and discussed.