کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044757 | 1518924 | 2017 | 13 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Structural and optoelectronic properties of a-Si:H: A new analysis based on spectroscopic ellipsometry
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
Hydrogenated amorphous silicon (a-Si:H) thin film has important applications in optoelectronic devices. In this work, a new analytical method of spectroscopic ellipsometry has been proposed, which can be used to calculate the density of electronic states and the optoelectronic parameters in a-Si:H. Meanwhile, the material structures, the optoelectronic properties and the relationship between them have been analyzed. Results show that the variation in electronic structure is directly related to the thin film structure. The increase of disorder in amorphous network has a strong impact on the DOS in band tails, especially in the valence band tail. The main source of variation in the peak position of dielectric function and the optical gap is the content of bonded hydrogen in the thin film. Likewise, the decrease in the amplitude of dielectric function is due primarily to the reduction in effective valence electrons induced by density deficit. Moreover, the optical absorption exhibits a contrary trend in the energy region below and above â¼1.7Â eV. This is because the samples with higher deposition temperature have larger DOS in band tails and lower optical gap.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 146, December 2017, Pages 409-421
Journal: Vacuum - Volume 146, December 2017, Pages 409-421
نویسندگان
Jian He, Anran Guo, Wei Li, Jiliang Mu, Xiaojuan Hou, Chenyang Xue, Xiujian Chou,