کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044906 | 1518945 | 2016 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Determination and controlling of crystal growth rate during silicon purification by directional solidification
ترجمه فارسی عنوان
تعیین و کنترل سرعت رشد کریستال در خالص سازی سیلیکون با خنک شدن جهت
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
پاک کردن سیلیکون، خنک کننده جهت نرخ رشد کریستال،
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
چکیده انگلیسی
A theoretical model for investigating the crystal growth rate and the solidified height during silicon purification by directional solidification is proposed. The growth rate is not constant usually and it has profound effects on the distribution of metal impurity in production process. The crystal growth rate and the solidified height, based on thermal equilibrium on the melt-crystal interface, were discussed. The relationship between the surface temperature of silicon melt (T1) and temperature of graphite heater (TCâ²1) was found. The result shows that the value of T1 has an approximate linear relationship with the TCâ²1. The theoretical model can be used to design or predict the crystal growth rate by controlling the TC1 according to the different request. Then, the distribution of metal impurity during silicon purification by directional solidification can be calculated according to the crystal growth rate. Thus, the theoretical model can be used to design the growth rate and predict the distribution of impurity to the silicon purification process by directional solidification. The experiments proved that the calculation agreed well with the existing experimental results.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 125, March 2016, Pages 75-80
Journal: Vacuum - Volume 125, March 2016, Pages 75-80
نویسندگان
Shutao Wen, Dachuan Jiang, Shuang Shi, Yi Tan, Pengting Li, Zheng Gu, Xiaofeng Zhang,