کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8044956 | 1518948 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
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چکیده انگلیسی
We employed oxygen plasma treatment to improve the electrical properties in Cu/n-type Ge Schottky junctions and investigated temperature dependent current transport mechanism in the temperature range of 100-300Â K. The Schottky barrier height increased commensurate with increasing temperature, which was attributed to barrier inhomogeneity. The inhomogeneity of the barrier was represented by a double Gaussian distribution, each one prevailing in a distinct temperature range: a high-temperature range from 220 to 300Â K and a low-temperature range from 100 to 180Â K. Modified Richardson plots revealed a Richardson constant of 160.0Â Acmâ2Â Kâ2 for the high-temperature region (220-300Â K), which is comparable to the theoretical value of 140.0Â Acmâ2Â Kâ2 for n-type Ge. Reverse current analysis revealed that Poole-Frenkel and Schottky emissions were dominant in the lower and higher voltage regions, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 121, November 2015, Pages 125-128
Journal: Vacuum - Volume 121, November 2015, Pages 125-128
نویسندگان
Hogyoung Kim, Se Hyun Kim, Chan Yeong Jung, Yunae Cho, Dong-Wook Kim,