Keywords: ریچاردسون ثابت; Thermionic emission; Barium titanate; Tungsten; Work function; Richardson constant;
مقالات ISI ریچاردسون ثابت (ترجمه نشده)
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Thermal stability of oxidized noble metal Schottky contacts to ZnO
Keywords: ریچاردسون ثابت; ZnO; Schottky contact; Richardson constant; High temperature; Palladium; Iridium;
The effects of high-energy proton irradiation on the electrical characteristics of Au/Ni/4H-SiC Schottky barrier diodes
Keywords: ریچاردسون ثابت; Richardson constant; Proton irradiation; 4H-SiC; SBD;
Performance of RF sputtered p-Si/n-ZnO nanoparticle thin film heterojunction diodes in high temperature environment
Keywords: ریچاردسون ثابت; Si/ZnO heterojunction diode; Surface morphology; Current-voltage characteristics; Interface; Richardson constant; Temperature stability;
Analysis of temperature-dependent current transport mechanism in Cu/n-type Ge Schottky junction
Keywords: ریچاردسون ثابت; Current transport; Barrier inhomogeneity; Richardson constant;
Temperature-dependent current–voltage characteristics of Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
Keywords: ریچاردسون ثابت; I–V characteristics; Temperature-dependent; Richardson constant; Barrier Inhomogeneities; Gaussian Distribution
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
Keywords: ریچاردسون ثابت; Richardson constant; High energy electron irradiation; Silicon carbide; Schottky barrier height;
Electrical characterization of Ni/Al0.09Ga0.91N Schottky barrier diodes as a function of temperature
Keywords: ریچاردسون ثابت; GaN semiconductor; Schottky barrier height; Richardson constant; Therminoic emission; Barrier inhomogeneity;
A study on the electrical characteristic of n-ZnO/p-Si heterojunction diode prepared by vacuum coating technique
Keywords: ریچاردسون ثابت; n-ZnO/p-Si heterojunction; Electrical properties; Barrier height; Richardson constant; Vacuum coating technique
Temperature dependent I-V characteristics of an Au/n-GaAs Schottky diode analyzed using Tung's model
Keywords: ریچاردسون ثابت; GaAs semiconductor; Schottky diodes; Schottky barrier height; Barrier inhomogeneity; Richardson constant; Metal-semiconductor-metal contacts;
Double barrier heights in 5,6,11,12-tetraphenylnaphthacene (rubrene) based organic Schottky diode
Keywords: ریچاردسون ثابت; Rubrene thin film; Schottky diode; Spin coating method; Barrier height; Gaussian distribution; Richardson constant
Multiple-barrier distribution behavior of Mo/p-GaTe fabricated with sputtering
Keywords: ریچاردسون ثابت; Schottky barrier anomalies; Gaussian distribution; Richardson constant; Schottky diode; GaTe; Layered crystal
Analysis of temperature dependent I–VI–V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant
Keywords: ریچاردسون ثابت; 71.55.--i; 72.10.Bg; 72.20.Jv; 79.40.++zSchottky contacts; Electrical characterization; Richardson constant; Barrier inhomogeneities; Barrier height; DLTS
I(V) computational conduction model for a SiC-6H Schottky diode
Keywords: ریچاردسون ثابت; Schottky diode; SiC-6H diode; Thermionic current; Richardson constant
Characterization and modeling of temperature-dependent barrier heights and ideality factors in GaAs Schottky diodes
Keywords: ریچاردسون ثابت; Schottky barrier; Ideality factor; Richardson constant; Thermionic emission; GaAs; Temperature; Modeling; Characterization
Schottky diode using FeCl3-doped polyaniline
Keywords: ریچاردسون ثابت; Schottky diodes; FeCl3-doped PANI/gold junction; Richardson constant; Ideality factor; Barrier height;