Analysis of temperature dependent I–VI–V measurements on Pd/ZnO Schottky barrier diodes and the determination of the Richardson constant

Temperature dependent current–voltage (I–V)(I–V) and Hall measurements were performed on Pd/ZnO Schottky barrier diodes in the range 20–300 K. The apparent Richardson constant was found to be 8.60×10-9AK-2cm-2 in the 60–160 K temperature range, and mean barrier height of 0.50 eV in the 180–300 K temperature range. After barrier height inhomogeneities correction, the Richardson constant and the mean barrier height were obtained as 167AK-2cm-2 and 0.61 eV in the temperature range 80–180 K, respectively. A defect level with energy at 0.12 eV below the conduction band was observed using the saturation current plot and (0.11±0.01)eV using deep level transient spectroscopy measurements.