I(V) computational conduction model for a SiC-6H Schottky diode

A computational model has been developed in order to explain the anomalies observed in the direct SiC-6H I(V) characteristic diode. These irregularities consist in a thermionic, a generation–recombination, a tunnelling and a leakage electric current contributions.Two kinds of diode's dimensions have been used. For the small one, a good fitting, at all temperatures has been obtained, but for the big one, the fitting was relatively bad, perhaps due to a so important parasite resistance versus potential variation. Even, a high parasite resistance has been encountered near room temperature.From the Richardson plot, it has been extracted a value of the Richardson constant A* very smaller than the theoretical value. A value of the barrier height has also been evaluated.