کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
7118765 | 1461407 | 2015 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
The influence of high energy electron irradiation on the Schottky barrier height and the Richardson constant of Ni/4H-SiC Schottky diodes
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی برق و الکترونیک
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
The influence of high energy electron (HEE) irradiation from a Sr-90 radio-nuclide on n-type Ni/4H-SiC samples of doping density 7.1Ã1015Â cmâ3 has been investigated over the temperature range 40-300Â K. Current-voltage (I-V), capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) were used to characterize the devices before and after irradiation at a fluence of 6Ã1014 electrons-cmâ2. For both devices, the I-V characteristics were well described by thermionic emission (TE) in the temperature range 120-300Â K, but deviated from TE theory at temperature below 120Â K. The current flowing through the interface at a bias of 2.0Â V from pure thermionic emission to thermionic field emission within the depletion region with the free carrier concentrations of the devices decreased from 7.8Ã1015 to 6.8Ã1015 cmâ3 after HEE irradiation. The modified Richardson constants were determined from the Gaussian distribution of the barrier height across the contact and found to be 133 and 163Â AÂ cmâ2Â Kâ2 for as-deposited and irradiated diodes, respectively. Three new defects with energies 0.22, 0.40 and 0.71Â eV appeared after HEE irradiation. Richardson constants were significantly less than the theoretical value which was ascribed to a small active device area.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Materials Science in Semiconductor Processing - Volume 39, November 2015, Pages 112-118
Journal: Materials Science in Semiconductor Processing - Volume 39, November 2015, Pages 112-118
نویسندگان
E. Omotoso, W.E. Meyer, F.D. Auret, A.T. Paradzah, M. Diale, S.M.M. Coelho, P.J. Janse van Rensburg,