کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
8045066 1518968 2014 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Photoluminescence spectra of nitrogen-rich InN thin films grown on Si(110) and photoelectrochemical etched Si(110)
موضوعات مرتبط
مهندسی و علوم پایه مهندسی مواد سطوح، پوشش‌ها و فیلم‌ها
پیش نمایش صفحه اول مقاله
Photoluminescence spectra of nitrogen-rich InN thin films grown on Si(110) and photoelectrochemical etched Si(110)
چکیده انگلیسی
Indium nitride (InN) thin films were deposited on anisotropic silicon [Si(110)] and photoelectrochemical etched silicon [Psi(110)] substrates by reactive radio-frequency sputtering. All deposited films showed wurtzite nanocrystalline InN films with a (101) preferred growth orientation. The optical properties of the nitrogen-rich InN thin films were investigated under various deposition gas concentrations. Strong photoluminescence was observed in the 1.8 eV-1.98 eV energy range for nanocrystalline InN grown on Si(110) at room temperature. The lower energy emission peak was achieved for InN grown on PSi(110) samples.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 101, March 2014, Pages 217-220
نویسندگان
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