کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8045262 | 1518968 | 2014 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Etch characteristics of MgO thin films in Cl2/Ar, CH3OH/Ar and CH4/Ar plasmas
دانلود مقاله + سفارش ترجمه
دانلود مقاله ISI انگلیسی
رایگان برای ایرانیان
کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
مهندسی مواد
سطوح، پوششها و فیلمها
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
High density plasma etching of MgO thin films patterned with Ti (or TiN) hard masks was conducted using Cl2/Ar, CH3OH/Ar and CH4/Ar gases. As the concentration of each gas increased, the etch rate of MgO thin films decreased and there was no enhancement of etch profiles except for those obtained using CH4/Ar gas. The etch profiles of MgO thin films under CH4/Ar gas, which is non-corrosive and non-toxic, were improved without redeposition with increasing CH4 concentration. The enhancement of etch profiles in CH4/Ar gas was attributed to both the formation of a protective layer containing hydrogen and hydroxyl species on the sidewall of the patterns and the formation of magnesium compounds during the etching. Optical emission spectroscopy and X-ray photoelectron spectroscopy analyses showed that magnesium hydroxide was formed due to chemical reactions on the film surface under CH4/Ar gas. Additionally, the MgO thin films were found to be etched by a physical sputtering etching mechanism that was influenced by a chemical reaction.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Vacuum - Volume 101, March 2014, Pages 394-398
Journal: Vacuum - Volume 101, March 2014, Pages 394-398
نویسندگان
Il Hoon Lee, Tea Young Lee, Su Min Hwang, Chee Won Chung,