Post-annealing properties of aluminum-doped zinc oxide films fabricated by ion beam co-sputtering

► AZO films are fabricated by ion beam co-sputtering. ► Heat treatment disorders the crystalline structure and reduces residual stress of the AZO film. ► Electric properties of the AZO film are stable below post-annealing temperature 200 °C. ► Band gaps vary from 3.81 to 3.49 eV as annealing temperature up to 400 °C.