کد مقاله کد نشریه سال انتشار مقاله انگلیسی ترجمه فارسی نسخه تمام متن
8070855 1521389 2018 11 صفحه PDF سفارش دهید دانلود رایگان
عنوان انگلیسی مقاله ISI
Comparison of potential-induced degradation (PID) of n-type and p-type silicon solar cells
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موضوعات مرتبط
مهندسی و علوم پایه مهندسی انرژی انرژی (عمومی)
پیش نمایش صفحه اول مقاله
Comparison of potential-induced degradation (PID) of n-type and p-type silicon solar cells
چکیده انگلیسی
Potential-induced degradation (PID) of photovoltaic (PV) modules is one of the most severe types of degradation, where power losses on system level may even exceed 30%. The PID process depends on the strength of the electric field, the temperature, the relative humidity, conductive soiling, time and the PV module materials. For p-type cells, it has been established that the decrease of the shunt resistance, due to migration of sodium ions across the n/p junction is the root cause of the degradation. On the other hand, it has recently been confirmed for n-type cells that the PID occurs due to an increase in recombination as charges are driven to the anti-reflection (AR) coating/emitter interface. In this paper, we present the comparison between PID of p-type and n-type crystalline silicon (c-Si) solar cells and their progression of PID. The time evolution of PID is studied by light and dark I-V curve measurements, electroluminescence images and progressions of the one- and two-diode equivalent model parameters, viz. photocurrent, 1st and 2nd diode reverse saturation currents, 1st and 2nd diode ideality factors, shunt resistance and series resistance.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Energy - Volume 161, 15 October 2018, Pages 266-276
نویسندگان
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