Neutron detection with integrated sub-2 nm Pt nanoparticles and 10B enriched dielectrics—A direct conversion device

• The first direct conversion solid-state neutron detector by combining the 10B with sub-2 nm Pt NP in MOSCAP structures.
• Resolve the e–h separation challenge in direct conversion architectures by embedding Pt NPs as charge trap centers.
• Both single and dual Pt NP layer embedded architectures, with varying electron addition energies, were studied.
• Dual Pt NP layer embedded devices with higher electron addition energy are shown to successfully capture charges.

We report a direct conversion solid-state neutron detection device fabricated by combining the large neutron capture cross-section of 10B with the charge trapping attributes of sub-2 nm Pt nanoparticles (Pt NPs) in MOSCAP structures. The 10B embedded polystyrene based neutron conversion layer also serves as the dielectric layer. Neutron sensing is achieved through carrier generation within the active 10B based dielectric layer and subsequent transfer to the embedded Pt NP layers, resulting in a significant change of the device's flat-band voltage upon ex-situ characterization. Both single and dual Pt NP layer embedded architectures, with varying electron addition energies, were tested within this study. While dual-layer Pt NPs embedded direct conversion devices with higher electron addition energy are shown to successfully capture charges generated through energetic reaction product upon neutron capture, the single Pt NP layer embedded device structure with lower electron addition energy displays signs of charge loss attributable to direct tunneling in the ex-situ capacitance–voltage measurement. Although only ex-situ detector operation is demonstrated within the realms of this study, sensitive in-situ neutron detectors and ultra-stable ex-situ dosimeters may be achievable utilizing a similar structure by fine-tuning the Pt NP size and the number of Pt NP layers in the device.