Improved performance of In0.83Ga0.17As/InP photodetectors through modifying the position of In0.66Ga0.34As/InAs superlattice electron barrier

The performance of wavelength extended In0.83Ga0.17As/InP photodetectors has been improved notably through modifying the position of electron barriers in absorption layer. In order to fully utilize the diffusion component of the photocurrent, the In0.66Ga0.34As/InAs superlattice electron barrier is moved to the edge of the depletion region. Enhanced peak photo responsivity up to 0.84 A/W is realized, which raises 24% compared to that of a reference detector with the superlattice barrier in the middle of the absorber. The dark current slightly increases by 25% at room temperature while decreases by more than an order of magnitude at 150 K, resulting in about 10% or more than twofold improvements for the detectivity, respectively. The results suggest that optimized barrier position is a necessity for barrier-type photodetectors to achieve better performances.