کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8147723 | 1524152 | 2018 | 23 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Electrical metal contacts to atomically thin 2H-phase MoTe2 grown by metal-organic chemical vapor deposition
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
We grow atomically thin molybdenum ditelluride (MoTe2) films on a SiO2/Si substrate by means of metal-organic chemical vapor deposition (MOCVD). Our Raman spectroscopy measurements reveal the formation of 2H-phase MoTe2 films. Further, transmission electron microscopy and X-ray photoelectron spectroscopy studies indicate a three-atomic-layer structure and the surface element composition of MoTe2 films. In this study, we mainly focus on the influence of metal contacts attached to the films on their electrical performance. We fabricate 2H-phase-MoTe2-based field-effect transistors (FETs) with various metal contacts such as titanium/gold, nickel and palladium, which present p-type semiconductor properties. We also examine the influence of the work functions of the contact metals on the electrical properties of three-atomic-layer-MoTe2-based FET devices. For a p-type MoTe2 semiconductor, higher work functions of the contact metals afford narrower Schottky barrier heights (SBHs) and eventually highly efficient carrier injection through the contacts.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Issue 7, July 2018, Pages 843-846
Journal: Current Applied Physics - Volume 18, Issue 7, July 2018, Pages 843-846
نویسندگان
TaeWan Kim, DaeHwa Joung, Jonghoo Park,