کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148053 | 1524156 | 2018 | 21 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Formation of graphene on amorphous SiC film by surface-confined heating with electron beam irradiation
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
It is demonstrated experimentally that graphene can form on the surface of an amorphous SiC film by irradiating electron beam (e-beam) at low acceleration voltage. As the electron irradiation fluency increases, the crystallinity and uniformity of graphene improve, which is confirmed by the changes of the measured Raman spectra and secondary electron microscopy images. Due to the shallow penetration depth of e-beam with low acceleration voltage, only the region near the surface of SiC film will be heated by the thermalization of irradiated electrons with multiple scattering processes. The thermalized electrons are expected to weaken the bond strength between Si and C atoms so that the thermal agitation required for triggering the sublimation of Si atoms decreases. With these assistances of irradiated electrons, it is considered that graphene can grow on the surface of SiC film at temperature reduced substantially in comparison with the conventional vacuum annealing process.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Issue 3, March 2018, Pages 335-339
Journal: Current Applied Physics - Volume 18, Issue 3, March 2018, Pages 335-339
نویسندگان
Hanbyul Jin, Jung-Yong Lee, Junhyung Kim, Sungchul Jung, Kyuhyung Mo, Kibog Park,