کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148235 | 1524158 | 2018 | 6 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Photothermally controlled 50Â mA gating in VO2-based planar device using NIR laser diode
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
By utilizing a near infrared laser diode as an excitation light source, we demonstrated a photothermally controlled current gating of 50Â mA in a two-terminal planar device based on a vanadium dioxide (VO2) thin film grown by a pulsed laser deposition method. The photothermally controlled on/off triggering of the device current was accomplished by controlling the output power of the laser beam that illuminated the VO2 film. The transient responses of photothermally triggered currents were analyzed when periodical laser pulses from the laser diode stimulated the VO2 device at a variety of pulse widths and repetition rates. A switching contrast between off-state and on-state currents was evaluated as â¼11905, and average rising and falling times were measured as â¼45 and â¼19Â ms, respectively.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Issue 1, January 2018, Pages 127-132
Journal: Current Applied Physics - Volume 18, Issue 1, January 2018, Pages 127-132
نویسندگان
Jihoon Kim, Sun Jae Jeong, Bong-Jun Kim, Yong Wook Lee,