کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8148313 | 1524159 | 2018 | 7 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
فیزیک ماده چگال
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement Analysis of current drift on p-channel pH-Sensitive SiNW ISFET by capacitance measurement](/preview/png/8148313.png)
چکیده انگلیسی
The mechanism of drift effect in pH-sensitive silicon nanowire (SiNW) ion sensitive field effect transistor (ISFET) is comprehensively studied by measuring the time-dependent drain current (ID) and the gate capacitance (CG) under different liquid-gate biases (VLGs) and pH levels. It was revealed that the origin of the current drift can be divided into three different mechanisms; the bulk ionic diffusion in sensing insulator, the chemical modification of insulator surface, and the oxide etch process induced by hydroxide (OHâ) ion. Based on the VLG/pH dependency of current drift and the transient CG variation, it is clearly recognized that the drift of n-type SiNW (n-SiNW) ISFET results from H+ diffusion in the insulator, whereas that of p-type SiNW (p-SiNW) ISFET is caused by temporal chemical modification (hydration) of the insulator, along with the oxide thickness (tox) reduction by OHâ ions.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Current Applied Physics - Volume 18, Supplement, August 2018, Pages S68-S74
Journal: Current Applied Physics - Volume 18, Supplement, August 2018, Pages S68-S74
نویسندگان
Sihyun Kim, Dae Woong Kwon, Sangwan Kim, Ryoongbin Lee, Tae-Hyeon Kim, Hyun-Sun Mo, Dae Hwan Kim, Byung-Gook Park,