Growth of Y-type hexaferrite thin films by alternating target laser ablation deposition

We have developed a technique for depositing single phase Y-type hexaferrite thin films at low substrate temperatures using pulsed laser deposition. Hexagonal Ba2Co2Fe12O22 thin films were grown on sapphire (0001) by alternating target laser ablation deposition, in which three different targets were used for sequential deposition. The substrate was heated to 910 °C in an atmosphere of pure oxygen. Flash annealing at 1050 °C for 30 min in an oxygen atmosphere induced single phase growth. Structural characterization measurements included composition analysis, X-ray diffractometer and scanning electron microscopy. Magnetic characterization measurements included vibrating sample magnetometer and ferromagnetic resonance. The saturation magnetization was measured to be 2520 G, g=1.52 and the magnetic uniaxial anisotropy field was estimated to be 13.2 kOe. The magnetic and structural measurements are in agreement with bulk parameters.