کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8168908 | 1526295 | 2016 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Radiation tolerance study of a commercial 65Â nm CMOS technology for high energy physics applications
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
چکیده انگلیسی
This paper reports the radiation tolerance study of a commercial 65Â nm technology, which is a strong candidate for the Large Hadron Collider applications. After exposure to 3Â MeV protons till 1Â Grad dose, the 65Â nm CMOS transistors, especially the pMOSFETs, showed severe long-term degradation mainly in the saturation drain currents. There were some differences between the degradation levels in the nMOSFETs and the pMOSFETs, which were likely attributed to the positive charges trapped in the gate spacers. After exposure to heavy ions till multiple strikes, the pMOSFETs did not show any sudden loss of drain currents, the degradations in the characteristics were negligible.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 831, 21 September 2016, Pages 265-268
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 831, 21 September 2016, Pages 265-268
نویسندگان
Lili Ding, Simone Gerardin, Marta Bagatin, Dario Bisello, Serena Mattiazzo, Alessandro Paccagnella,