کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8173058 | 1526339 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cryogenic ultra-low noise HEMT amplifiers board
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Cryogenic ultra-low noise HEMT amplifiers board Cryogenic ultra-low noise HEMT amplifiers board](/preview/png/8173058.png)
چکیده انگلیسی
High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at a very low temperature, have demonstrated their capacity to be used in place of Si JFETs, when very high input impedance and working temperatures below 100Â K are required. We have developed and tested simple amplifiers based only on this transistor technology, in order to work at a temperature as low as 1Â K or less. They demonstrate at 4.2Â K a typical noise of 1.6Â nV/Hz at 100Â Hz, 0.42Â nV/Hz at 1Â kHz and 0.32Â nV/Hz at 10Â kHz, with a gain of 50 and a power consumption of 1.4Â mW per channel. Two boards have been designed for two different research applications: one for the readout of GMR magnetometers for medical and space applications, the other for search of weakly interacting massive particles (WIMPs) in Edelweiss experiment (HARD project).
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 787, 1 July 2015, Pages 51-54
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 787, 1 July 2015, Pages 51-54
نویسندگان
Xavier de la Broïse, Ayoub Bounab,