کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8173074 | 1526339 | 2015 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version Cryogenic low noise and low dissipation multiplexing electronics, using HEMT+SiGe ASICs, for the readout of high impedance sensors: New version](/preview/png/8173074.png)
چکیده انگلیسی
High Electron Mobility Transistors (HEMTs), optimized by CNRS/LPN laboratory for ultra-low noise at very low temperature, have demonstrated their capacity to be used in place of Si JFETs when working temperatures below 100 K are required. We associated them with specific SiGe ASICs that we developed, to implement a complete readout channel able to read highly segmented high impedance detectors within a framework of very low thermal dissipation. Our electronics is dimensioned to read 4096 detection channels, of typically 1 MΩ impedance, and performs 32:1 multiplexing and amplifying, dissipating only 6 mW at 2.5 K and 100 mW at 15 K thanks to high impedance commuting of input stage, with a typical noise of 1 nV/âHz at 1 kHz.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 787, 1 July 2015, Pages 64-67
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 787, 1 July 2015, Pages 64-67
نویسندگان
Xavier de la Broïse, Francis Lugiez, Ayoub Bounab, Alain Le Coguie,