کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8176373 | 1526379 | 2014 | 4 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
An implantation and β detection system applied in β-decay studies
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
ابزار دقیق
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: An implantation and β detection system applied in β-decay studies An implantation and β detection system applied in β-decay studies](/preview/png/8176373.png)
چکیده انگلیسی
To study the β decays of nuclei far from the β-stability line, an implantation and β detection system has been implemented at the Peking University. This detection system covers a wide energy range from keV to GeV while maintaining a good energy resolution and a low detection threshold. By correlating the implantation nuclei with their subsequent β-decays within the same pixel or adjacent pixels of a double-sided silicon detector (DSSD), the β decay properties of implanted nuclei can be measured with much less disturbance from other unstable nuclei and the random background.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 747, 21 May 2014, Pages 52-55
Journal: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment - Volume 747, 21 May 2014, Pages 52-55
نویسندگان
Chao He, Xiangqing Li, Hui Hua, Zhihuan Li, Dongxing Jiang, Yanlin Ye, Shuangquan Zhang, Rui Han, Chuan Xu, Enhong Wang, Yiyuan Cheng, Junjie Sun, Chenyang Niu, Zhengyang Tian, Shuo Wang, He Wang, Yushou Song, Huilan Liu, Hushan Xu,