کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
8208593 | 1532062 | 2018 | 28 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor
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موضوعات مرتبط
مهندسی و علوم پایه
فیزیک و نجوم
تشعشع
پیش نمایش صفحه اول مقاله
![عکس صفحه اول مقاله: Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor Proposal of a neutron transmutation doping facility for n-type spherical silicon solar cell at high-temperature engineering test reactor](/preview/png/8208593.png)
چکیده انگلیسی
The p-type spherical silicon solar cell is a candidate for future solar energy with low fabrication cost, however, its conversion efficiency is only about 10%. The conversion efficiency of a silicon solar cell can be increased by using n-type silicon semiconductor as a substrate. This study proposed a new method of neutron transmutation doping silicon (NTD-Si) for producing the n-type spherical solar cell, in which the Si-particles are irradiated directly instead of the cylinder Si-ingot as in the conventional NTD-Si. By using a 'screw', an identical resistivity could be achieved for the Si-particles without a complicated procedure as in the NTD with Si-ingot. Also, the reactivity and neutron flux swing could be kept to a minimum because of the continuous irradiation of the Si-particles. A high temperature engineering test reactor (HTTR), which is located in Japan, was used as a reference reactor in this study. Neutronic calculations showed that the HTTR has a capability to produce about 40 t/EFPY of 10 Ω cm resistivity Si-particles for fabrication of the n-type spherical solar cell.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Applied Radiation and Isotopes - Volume 135, May 2018, Pages 12-18
Journal: Applied Radiation and Isotopes - Volume 135, May 2018, Pages 12-18
نویسندگان
Hai Quan Ho, Yuki Honda, Mizuki Motoyama, Shimpei Hamamoto, Toshiaki Ishii, Etsuo Ishitsuka,