The behavior of fixed and switching oxide traps of RADFETs during irradiation up to high absorbed doses

The equation for fitting the threshold voltage components induced by FTs (ΔVft) and by STs (ΔVst) is proposed and very good fittings are obtained. It is shown that five experimental irradiation points are sufficient to draw a good conclusion about the values of the fitting parameters, i.e., the voltage saturation values and the degree of linearity.