کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
837681 908346 2011 13 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Dynamical properties of electrical circuits with fully nonlinear memristors
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Dynamical properties of electrical circuits with fully nonlinear memristors
چکیده انگلیسی

The recent design of a nanoscale device with a memristive characteristic has had a great impact in nonlinear circuit theory. Such a device, whose existence was predicted by Leon Chua in 1971, is governed by a charge-dependent voltage–current relation of the form v=M(q)iv=M(q)i. In this paper, we show that allowing for a fully nonlinear characteristic v=η(q,i)v=η(q,i) in memristive devices provides a general framework for modeling and analyzing a very broad family of electrical and electronic circuits; Chua’s memristors are particular instances in which η(q,i)η(q,i) is linear in ii. We examine several dynamical features of circuits with fully nonlinear memristors, accommodating not only charge-controlled but also flux-controlled ones, with a characteristic of the form i=ζ(φ,v)i=ζ(φ,v). Our results apply in particular to Chua’s memristive circuits; certain properties of these can be seen as a consequence of the special form of the elastance and reluctance matrices displayed by Chua’s memristors.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Nonlinear Analysis: Real World Applications - Volume 12, Issue 6, December 2011, Pages 3674–3686
نویسندگان
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