کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
847847 909233 2016 4 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Conspicuous current dependence of the emission energy from InxGa1−xN/GaN quantum well diodes
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Conspicuous current dependence of the emission energy from InxGa1−xN/GaN quantum well diodes
چکیده انگلیسی

The emission spectrum of the conventional InGaN/GaN quantum well (QW) diode changes remarkably with the operating current. The degree of change depends on the constituent parameters of the QW. A detailed investigation has been carried out through the self-consistent solutions of the Schrödinger and Poisson equations to elucidate the change of the emission energy and the transition probability with the operating current and to explore how the changes depend on the well width of the QW and the In mole fraction. It is found that choosing suitable values of the mentioned parameters, the emission energy may be kept almost constant with current, or it may be tuned over a wide range through current. The two possibilities have immense importance for optoelectronic device applications.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 127, Issue 3, February 2016, Pages 1345–1348
نویسندگان
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