کد مقاله کد نشریه سال انتشار مقاله انگلیسی نسخه تمام متن
848688 1470602 2015 5 صفحه PDF دانلود رایگان
عنوان انگلیسی مقاله ISI
Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy
موضوعات مرتبط
مهندسی و علوم پایه سایر رشته های مهندسی مهندسی (عمومی)
پیش نمایش صفحه اول مقاله
Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy
چکیده انگلیسی

The optical band-gap has been investigated in detail in (InAs)GaAs/AlGaAs HEMTs structures using a photoluminescence spectroscopy. A power dependent PL study allows highlighting the different causes of the shift band-gap. We can explain the shift by more effects: quantum confined Stark effect (QCSE), band-gap renormalisation (BGR) and Burstein–Moss (BM) effects. We are interested in these effects based on the carriers’ behaviour inside GaAs and InAs/GaAs channels. These effects were affected by carrier concentration depending on Si-δ-doping density and AlGaAs spacer layer thickness as well as the strain relaxation effect. The photoluminescence characterisations have been studied in the 1–10 W cm−2 power range.

ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 126, Issues 9–10, May 2015, Pages 932–936
نویسندگان
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