کد مقاله | کد نشریه | سال انتشار | مقاله انگلیسی | نسخه تمام متن |
---|---|---|---|---|
848688 | 1470602 | 2015 | 5 صفحه PDF | دانلود رایگان |
عنوان انگلیسی مقاله ISI
Optical band-gap shift in (InAs)GaAs/AlGaAs HEMTs structures studied by photoluminescence spectroscopy
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کلمات کلیدی
موضوعات مرتبط
مهندسی و علوم پایه
سایر رشته های مهندسی
مهندسی (عمومی)
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چکیده انگلیسی
The optical band-gap has been investigated in detail in (InAs)GaAs/AlGaAs HEMTs structures using a photoluminescence spectroscopy. A power dependent PL study allows highlighting the different causes of the shift band-gap. We can explain the shift by more effects: quantum confined Stark effect (QCSE), band-gap renormalisation (BGR) and Burstein–Moss (BM) effects. We are interested in these effects based on the carriers’ behaviour inside GaAs and InAs/GaAs channels. These effects were affected by carrier concentration depending on Si-δ-doping density and AlGaAs spacer layer thickness as well as the strain relaxation effect. The photoluminescence characterisations have been studied in the 1–10 W cm−2 power range.
ناشر
Database: Elsevier - ScienceDirect (ساینس دایرکت)
Journal: Optik - International Journal for Light and Electron Optics - Volume 126, Issues 9–10, May 2015, Pages 932–936
Journal: Optik - International Journal for Light and Electron Optics - Volume 126, Issues 9–10, May 2015, Pages 932–936
نویسندگان
M. Daoudi, H. Kaouach, I. Dhifallah, A. Ouerghi, R. Chtourou,