Interface effects in SWCNT/GaAs heterojunction solar cell: A simulation study

Heterojunction compounds have a very wide range of optoelectronic applications and they are a good alternative for high efficient solar cells. A heterojunction structure for p–n solar cells has been presented with single walled carbon nanotubes as absorber and GaAs as semiconductor window. For this heterojunction solar cell, detailed interface characteristics have been studied. The J–V characteristics have calculated exerting general formulation of the J–V characteristic of a p–n heterojunction solar cell. This article considered that proposed SWCNTs/GaAs heterojunction solar cell capture nearly all of the sunlight and can achieve high efficiency in comparison with novel heterojunction solar cell. Furthermore, J–V characteristics of the cell have calculated in different light intensity.