Study of the optical-electrical characteristics of InxGa1−xN alloy with low in doping

The electronic structures and optical properties of In doped GaN were calculated with different doping concentration, from first-principles using density function theory with the plane-wave ultrasoft pseudopotential method. The influence of In doping on the volume, interactions among atoms, density of states, electron density difference, and optical properties of GaN was analyzed. The results show that the interactions among atoms are reduced, band gap decreases, and absorption spectra have red shift along with the increase of In doping concentration.