Influence of gate engineering on the optical characteristics of a double gate FinFET

In this paper, the potential benefit of short channel triple material double gate (TM-DG) FinFET on the optical performance characteristics considering quantum mechanical effects has been theoretically examined and analyzed. The device characteristics are obtained from the self-consistent solution of 3D Poisson–Schrödinger equation using Leibmann's iteration method and provided the reasons for improved performance. The drain and transfer characteristics, electric field, transconductance and mobility of the device have been estimated and the results were compared with the device simulator results. The effect of different length ratios of three channel regions related to three different materials of TM-DG FinFET structure on the optical characteristics have also been discussed. The model is purely a physics based one and overcomes the major limitations of the existing 2D/3D analytical models by providing a more accurate result. The results obtained for dark and illuminated conditions are used to examine the performance of the device for its suitable use as a photodetector.